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CEB170N10S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR170N10PG

100VN-ChannelPowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR170N10RG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

IXFH170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH170N10P

PolarHiperFETPowerMOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFK170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXFK170N10P

PolarHiperFETPowerMOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFN170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXTK170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTK170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTT170N10P

PolarTMPowerMOSFET

IXYS

IXYS Corporation

IXTT170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
24+
50000
詢價
CET
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
CET
24+
TO-263
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
CET
2020+
TO-263
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
JINGDAO/晶導(dǎo)微
23+
SOD-123
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET
21+
TO-263
70
原裝現(xiàn)貨假一賠十
 詢價
CET
22+
TO-263
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
C
TO-263
22+
6000
十年配單,只做原裝
 詢價
C
23+
TO-263
6000
原裝正品，支持實單
 詢價
更多CEB170N10S供應(yīng)商 更新時間2024-11-16 16:30:00

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