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IXFK170N10

HiPerFET Power MOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXFK170N10P

Polar HiperFET Power MOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

CEB170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR170N10PG

100VN-ChannelPowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR170N10RG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

IXFH170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH170N10P

PolarHiperFETPowerMOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFN170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXTK170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTK170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTT170N10P

PolarTMPowerMOSFET

IXYS

IXYS Corporation

IXTT170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFK170N10

  • 功能描述：

    MOSFET 170 Amps 100V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IXYS
23+
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19960
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IXYS
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18
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13880
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更多IXFK170N10供應(yīng)商 更新時(shí)間2024-12-22 15:30:00

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