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IXFN102N30P

PolarHV HiPerFET Power MOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInducti

IXYS

IXYS Corporation

IXFK102N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=102A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK102N30P

PolarHTHiPerFETPowerMOSFET

PolarHT?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?

IXYS

IXYS Corporation

IXFR102N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=36mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR102N30P

PolarHTHiPerFETPowerMOSFET

PolarHT?HiPerFETPowerMOSFET(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode FastIntrinsicDiodeAvalancheRated Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Intern

IXYS

IXYS Corporation

IXTK102N30P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTK102N30P

PolarHTPowerMOSFET

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN102N30P

  • 功能描述：

    MOSFET 102 Amps 300V 0.033 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
SOT-227B
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
SOT-227
59620
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
德國IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實(shí)單
 詢價(jià)
IXYS
23+
MOSFETN-CH300V88ASOT227B
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
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IXYS
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
IXYS
2023+
MODULE
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
IXYS
24+
SOT227
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
SOT227
114
詢價(jià)
IXYS
1931+
N/A
18
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更多IXFN102N30P供應(yīng)商 更新時(shí)間2025-2-23 14:14:00

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