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IXFN90N30

HiPerFET Power MOSFETs Single Die MOSFET

IXYS

IXYS Corporation

DAM90N30D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM90N30G

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGA90N30

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30provideslowconductionandswitchingloss.FGA90N30offerstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features ?HighCurrentCapability ?Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA90N30D

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30Dprovideslowconductionandswitchingloss.FGA90N30DofferstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features ?HighCurrentCapability ?Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGFP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFK90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK90N30

HiPerFETPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCconverters ?Battery

IXYS

IXYS Corporation

IXFR90N30

PowerMOSFET

IXYS

IXYS Corporation

IXFR90N30

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFX90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX90N30

HiPerFETPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCconverters ?Battery

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFN90N30

  • 功能描述：

    MOSFET 90 Amps 300V 0.033 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價格優(yōu)惠.全新原裝正品
 詢價
德國IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實單
 詢價
IXYS/艾賽斯
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價
IXYS
24+
600
詢價
IXYS
N/A
主營模塊
190
原裝正品,現(xiàn)貨供應(yīng)
 詢價
IXYS
23+
MOSFETN-CH300V90ASOT-227
1726
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
IXYS
2023+
MODULE
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IXYS
18+
2173
公司大量全新正品 隨時可以發(fā)貨
 詢價
更多IXFN90N30供應(yīng)商 更新時間2024-12-23 8:32:00

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