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IXFP3N120

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP3N120

HiPerFET Power MOSFETs

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N120

HighVoltagePowerMOSFETs

IXYS

IXYS Corporation

IXTH3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP3N120

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTP3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

MTB3N120E

TMOSPOWERFET3.0AMPERES1200VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

Motorola

Motorola, Inc

MTP3N120E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP3N120E

TMOSPOWERFET3.0AMPERES1200VOLTSRDS(on)=5.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–voltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.

Motorola

Motorola, Inc

詳細參數(shù)

  • 型號：

    IXFP3N120

  • 功能描述：

    MOSFET 3 Amps 1200V 4.50 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-220-3
30000
晶體管-分立半導體產品-原裝正品
 詢價
IXYS/艾賽斯
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
Littelfuse/IXYS
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IXYS
24+
TO-220
8866
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
IXYS
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
IXYS
20+
TO-220-3
90000
全新原裝正品/庫存充足
 詢價
IXYS
22+
TO220
10000
原裝正品優(yōu)勢現(xiàn)貨供應
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更多IXFP3N120供應商 更新時間2024-10-24 20:37:00

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