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IXTP3N120

High Voltage Power MOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTP3N120

High Voltage Power MOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTP3N120

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

3N120

NPN/PNPDUALEMITTERCHOPPERBI-POLARTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

HM3N120A

Powerswitchcircuitofadaptorandcharger

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM3N120F

Electricwelder,Inverter

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFA3N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFA3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP3N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH3N120

HighVoltagePowerMOSFETs

IXYS

IXYS Corporation

MTB3N120E

TMOSPOWERFET3.0AMPERES1200VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N120E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N120E

TMOSPOWERFET3.0AMPERES1200VOLTSRDS(on)=5.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–voltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    IXTP3N120

  • 功能描述：

    MOSFET MOSFET Id3 BVdass1200

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IXYS
24+
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30000
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1000
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10054
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更多IXTP3N120供應(yīng)商 更新時(shí)間2025-1-8 18:11:00

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