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MTP3N120E

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–voltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N120E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

3N120

NPN/PNPDUALEMITTERCHOPPERBI-POLARTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

HM3N120A

Powerswitchcircuitofadaptorandcharger

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM3N120F

Electricwelder,Inverter

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

IXFA3N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFA3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP3N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N120

HighVoltagePowerMOSFETs

IXYS

IXYS Corporation

IXTH3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP3N120

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTP3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

MTB3N120E

TMOSPOWERFET3.0AMPERES1200VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    MTP3N120E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

供應商型號品牌批號封裝庫存備注價格
ON(安森美)
23+
標準封裝
9571
全新原裝正品/價格優(yōu)惠/質量保障
 詢價
ON
2024+
TO-220
32560
原裝優(yōu)勢絕對有貨
 詢價
ON(安森美)
23+
13325
公司只做原裝正品,假一賠十
 詢價
ON
23+
TO-220
5500
現(xiàn)貨,全新原裝
 詢價
ON
23+
TO-220
6893
詢價
MOTOROLA
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
MOT
06+
TO-220
800
全新原裝 絕對有貨
 詢價
24+
5000
公司存貨
 詢價
16+
現(xiàn)貨
2866
原裝現(xiàn)貨假一罰十
 詢價
ON
23+
TO220
7780
全新原裝優(yōu)勢
 詢價
更多MTP3N120E供應商 更新時間2025-1-8 15:56:00

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