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IXFR200N10P
文件:561.32 Kbytes
Page:5 Pages
PolarTM HiPerFET Power MOSFET
IXYS
IXYS Corporation
文件:136.08 Kbytes
Page:6 Pages
Power MOSFET
IXFR200N10P_06
文件:107.41 Kbytes
Polar HiPerFET Power MOSFET
IXFR200N10P_17
IXFX200N10
文件:327.79 Kbytes
Page:2 Pages
iscN-ChannelMOSFETTransistor
FEATURES ·DrainCurrent-ID=200A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACandDCMotorDrives
ISCInchange Semiconductor Company Limited
無錫固電無錫固電半導(dǎo)體股份有限公司
ISC
IXFX200N10P
文件:208.05 Kbytes
PowerMOSFET
文件:119.44 Kbytes
PolarHiPerFETPowerMOSFET
IXTC200N10T
文件:191.2 Kbytes
TrenchMVPowerMOSFET
文件:295.64 Kbytes
IXTF200N10T
文件:166.2 Kbytes
N-ChannelEnhancementModeAvalancheRated
MOSFET 133 Amps 100V 0.0075 Rds
否
STMicroelectronics
N-Channel
650 V
25 V
130 A 電阻汲極/源極
0.014 Ohms
Single
Through Hole
Max247
Tube
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