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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFX55N50	文件：366.77 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFX55N50	文件：106.37 Kbytes Page：2 Pages	HiPerRF Power MOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFX55N50	文件：577.24 Kbytes Page：4 Pages	HiPerFET Power MOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFX55N50	文件：94.62 Kbytes Page：4 Pages	HiPerFET Power MOSFETs	IXYS IXYS Corporation	IXYS
IXFX55N50F	文件：1.92935 Mbytes Page：4 Pages	HiPerRFTM Power MOSFETs HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped	IXYS IXYS Corporation	IXYS
IXFE55N50	文件：655.77 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFET HiPerFETPowerMOSFET SingleDieMOSFET Features ?Lowcostdirect-copperbondedaluminiumpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?2500Visolation ?Lowdraintocasecapacitance ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?	IXYS IXYS Corporation	IXYS
IXFG55N50	文件：100.92 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：106.37 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：577.24 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：121.87 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：328.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFK55N50F	文件：1.92935 Mbytes Page：4 Pages	HiPerRFTMPowerMOSFETs HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped	IXYS IXYS Corporation	IXYS
IXFK55N50F	文件：327.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFN55N50	文件：599.65 Kbytes Page：3 Pages	N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·ACandDCMotorDrives ·HighSpeedPowerSwitchingApplication	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFN55N50	文件：577.24 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFN55N50	文件：121.87 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFN55N50	文件：106.37 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFN55N50F	文件：106.37 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFR55N50	文件：84.72 Kbytes Page：2 Pages	HiPerFET-TMPowerMOSFETsISOPLUS247-TM HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFR55N50F	文件：499.75 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching VDSS=500V ID25=55A RDS(on)=90m? trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste	IXYS IXYS Corporation	IXYS

詳細參數(shù)

型號：
IXFX55N50
功能描述：
MOSFET 500V 55A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導體有限公司	IXFX55N50	IXYS	24+	TO-247	1500		詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	IXFX55N50	IXYS	23+	管3P	5000	原裝正品,假一罰十	詢價
深圳市永貝爾科技有限公司	IXFX55N50	IXYS	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市華斯頓科技有限公司	IXFX55N50	IXYS	22+23+	1024ROHS	35626	絕對原裝正品全新進口深圳現(xiàn)貨	詢價
深圳市科恒偉業(yè)電子有限公司	IXFX55N50	IXYS	1822+	TO-247	9852	只做原裝正品假一賠十為客戶做到零風險!!	詢價
深圳市錦喆鴻電子有限公司	IXFX55N50	IXYS	21+	TO-247	12588	原裝正品,自己庫存假一罰十	詢價
深圳市賽芯源科技有限公司	IXFX55N50	IXYS	18+	TO-247	41200	原裝正品,現(xiàn)貨特價	詢價
瀚佳科技(深圳)有限公司	IXFX55N50	IXYS	18+	TO-247	2050	公司大量全新原裝正品隨時可以發(fā)貨	詢價
深圳市艾宇欣科技有限公司	IXFX55N50	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	IXFX55N50	IXYS/艾賽斯	2021+	TO-247	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價

更多IXFX55N50供應商更新時間2024-10-24 15:30:00

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