48沈阳熟女高潮嗷嗷叫,AA级黄片欧美AA

首頁 >IXFN55N50F>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFN55N50F	文件：106.37 Kbytes Page：2 Pages	HiPerRF Power MOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFE55N50	文件：655.77 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFET HiPerFETPowerMOSFET SingleDieMOSFET Features ?Lowcostdirect-copperbondedaluminiumpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?2500Visolation ?Lowdraintocasecapacitance ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?	IXYS IXYS Corporation	IXYS
IXFG55N50	文件：100.92 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：328.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFK55N50	文件：106.37 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：577.24 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFK55N50	文件：121.87 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFK55N50F	文件：1.92935 Mbytes Page：4 Pages	HiPerRFTMPowerMOSFETs HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped	IXYS IXYS Corporation	IXYS
IXFK55N50F	文件：327.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFN55N50	文件：599.65 Kbytes Page：3 Pages	N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·ACandDCMotorDrives ·HighSpeedPowerSwitchingApplication	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFN55N50	文件：577.24 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFN55N50	文件：121.87 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFN55N50	文件：106.37 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFR55N50	文件：84.72 Kbytes Page：2 Pages	HiPerFET-TMPowerMOSFETsISOPLUS247-TM HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFR55N50F	文件：499.75 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching VDSS=500V ID25=55A RDS(on)=90m? trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste	IXYS IXYS Corporation	IXYS
IXFX55N50	文件：577.24 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc	IXYS IXYS Corporation	IXYS
IXFX55N50	文件：106.37 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped	IXYS IXYS Corporation	IXYS
IXFX55N50	文件：94.62 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFX55N50	文件：366.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFX55N50F	文件：1.92935 Mbytes Page：4 Pages	HiPerRFTMPowerMOSFETs HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped	IXYS IXYS Corporation	IXYS

詳細參數(shù)

型號：
IXFN55N50F
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
中天科工半導體（深圳）有限公司	IXFN55N50F	IXYS	24+	SOT-227B	30000	晶體管-分立半導體產(chǎn)品-原裝正品	詢價
深圳市斌騰達科技有限公司	IXFN55N50F	IXYS	19+/20+	SOT-227B	1000	主打產(chǎn)品價格優(yōu)惠.全新原裝正品	詢價
深圳市拓億芯電子有限公司	IXFN55N50F	德國IXYS艾塞斯	23+	MOUDLE	12000	原裝正品假一罰十支持實單	詢價
深圳市勤思達科技有限公司	IXFN55N50F	IXYS場效應			100	原裝現(xiàn)貨,價格優(yōu)惠	詢價
深圳市鵬和科技有限公司	IXFN55N50F	IXYS	24+	SOT-227	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價
深圳市永貝爾科技有限公司	IXFN55N50F	IXYS	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市維爾達電子有限公司	IXFN55N50F	IXYS	2023+	MODULE	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
瀚佳科技(深圳)有限公司	IXFN55N50F	IXYS	24+		2173	公司大量全新正品隨時可以發(fā)貨	詢價
深圳市興燦科技有限公司	IXFN55N50F	IXYS	24+	SOT227	553		詢價
深圳市艾宇欣科技有限公司	IXFN55N50F	IXYS	1931+	N/A	100	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價

更多IXFN55N50F供應商更新時間2025-1-8 18:11:00

詳細參數(shù)

相關規(guī)格書

相關庫存