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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IXFQ26N60P	文件：248.46 Kbytes Page：5 Pages	N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi	IXYS IXYS Corporation	IXYS
IXFR26N60	文件：330.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFR26N60Q	文件：37.76 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS HiPerFET?PowerMOSFETsISOPLUS247?Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2	IXYS IXYS Corporation	IXYS
IXFT26N60	文件：70.95 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?	IXYS IXYS Corporation	IXYS
IXFT26N60P	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi	IXYS IXYS Corporation	IXYS
IXFT26N60Q	文件：107.91 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa	IXYS IXYS Corporation	IXYS
IXFV26N60P	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi	IXYS IXYS Corporation	IXYS
IXFV26N60PS	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi	IXYS IXYS Corporation	IXYS
IXFX26N60	文件：367.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFX26N60Q	文件：103.5 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi	IXYS IXYS Corporation	IXYS
IXTH26N60P	文件：380.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTH26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTQ26N60P	文件：300.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTQ26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTT26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTV26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTV26N60P	文件：294.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTV26N60PS	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
SIHFP26N60L	文件：226.66 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFP26N60L	文件：159.36 Kbytes Page：8 Pages	PowerMOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號(hào)：
IXFQ26N60P
制造商：
IXYS
制造商全稱：
IXYS Corporation
功能描述：
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市永貝爾科技有限公司	IXFQ26N60P	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
瀚佳科技(深圳)有限公司	IXFQ26N60P	IXYS	16+	TO-247	2100	公司大量全新現(xiàn)貨隨時(shí)可以發(fā)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IXFQ28N60	華奧DHA	23+	TO3P	400000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市達(dá)恩科技有限公司	IXFQ28N60P3	IXYS	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)
深圳市艾宇欣科技有限公司	IXFQ28N60P3	IXYS	1931+	N/A	60	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)
深圳市科雨電子有限公司	IXFQ28N60P3	IXYS	1809+	TO-3P	1675	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	IXFQ28N60P3	IXYS/艾賽斯	23+	TO3P	10000	公司只做原裝正品	詢價(jià)
深圳市易訊博科技有限公司	IXFQ28N60P3	IXYS	22+	NA	60	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市河鋒鑫科技有限公司	IXFQ28N60P3	IXYS	22+	TO3P3 SC653	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IXFQ28N60P3	IXYS	21+	TO3P3 SC653	13880	公司只售原裝,支持實(shí)單	詢價(jià)

更多IXFQ26N60P供應(yīng)商更新時(shí)間2024-11-7 16:06:00

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