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IXFR32N100P

Polar Power MOSFET HiPerFET

IXYS

IXYS Corporation

IXFK32N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK32N100P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.32Ω(Max)@VGS=10V ·Fast-recoverybodydiode APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK32N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK32N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFN32N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFR32N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=340mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX32N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX32N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IXFR32N100P

  • 功能描述:

    MOSFET 32 Amps 1000V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
ISOPLUS247?
30000
晶體管-分立半導體產(chǎn)品-原裝正品
詢價
IXYS/艾賽斯
17+
ISOPLUS247
31518
原裝正品 可含稅交易
詢價
IXYS/艾賽斯
23+
TO-247I
56230
原裝正品 華強現(xiàn)貨
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
ISOPLUS247
10000
公司只做原裝正品
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS
21+
ISOPLUS247?
13880
公司只售原裝,支持實單
詢價
IXYS
23+
ISOPLUS247?
9000
原裝正品,支持實單
詢價
IXYS
2022+
ISOPLUS247?
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
更多IXFR32N100P供應商 更新時間2024-11-7 17:16:00