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IXFT10N100

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou

IXYS

IXYS Corporation

IXFT10N100Q

HiPerFETTM Power MOSFETs Q Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFV10N100P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow

IXYS

IXYS Corporation

IXFV10N100PS

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow

IXYS

IXYS Corporation

IXGH10N100

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N100A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXTH10N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTH10N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH10N100D

N-Channel,DepletionMode

IXYS

IXYS Corporation

IXTM10N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTT10N100D

N-Channel,DepletionMode

IXYS

IXYS Corporation

MTM10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTV10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV10N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW10N100E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTY10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerEieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RM10N100LD

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures Vos=100Vl0=10A Rosin)

RECTRON

Rectron Semiconductor

詳細(xì)參數(shù)

  • 型號：

    IXFT10N100

  • 功能描述：

    MOSFET 10 Amps 1000V 1.2 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
IXYS/艾賽斯
2021+
TO-268
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
 詢價
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實(shí)單
 詢價
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
更多IXFT10N100供應(yīng)商 更新時間2024-12-27 14:13:00

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