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IXFT16N80P

PolarHV Power MOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFC16N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC16N80P

PolarHVHiPerFETPowerMOSFETISOPLUS220

N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFH16N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80PS

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

MTY16N80E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTY16N80E

TMOSPOWERFET16AMPERES800VOLTSRDS(on)=0.50OHM

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    IXFT16N80P

  • 功能描述：

    MOSFET 16 Amps 800V 0.6 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268AA
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-268S
59580
原裝正品 華強現(xiàn)貨
 詢價
IXYS
24+
TO-268
8866
詢價
IXYS
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ON/安森美
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-220
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
更多IXFT16N80P供應商 更新時間2025-2-2 14:14:00

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