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IXFV110N10P

PolarHT HiPerFET Power MOSFET

IXYS

IXYS Corporation

IXFV110N10PS

PolarHT HiPerFET Power MOSFET

IXYS

IXYS Corporation

ET110N10-Z

StandardSizeToggleSwitch

COPALCopal Electronics

尼得科科智博電子尼得科科智博電子(上海)有限公司

FIR110N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

IXFC110N10P

PolarHVHiPerFETPowerMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFC110N10P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH110N10P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH110N10P

PolarHTHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXTQ110N10P

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max) ?FastSwitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ110N10P

N-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTT110N10P

N-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

SUM110N10

N-Channel100V(D-S)175°CMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IXFV110N10P

  • 功能描述:

    MOSFET 110 Amps 100V 0.015 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
23+
PLUS220
40000
原裝正品 華強現(xiàn)貨
詢價
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IXYS/艾賽斯
23+
PLUS220
10000
公司只做原裝正品
詢價
IXYS
22+
TO2203 Short Tab
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
TO2203 Short Tab
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
PLUS220
6000
原裝正品,支持實單
詢價
IXYS
2022+
TO-220-3(SMT)標片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
原裝正品
23+
TO-220-3
67985
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
詢價
IXYS/艾賽斯
22+
PLUS220
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
詢價
更多IXFV110N10P供應商 更新時間2024-12-22 8:00:00