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首頁 >IXFX15N100>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFX15N100	文件：116.65 Kbytes Page：4 Pages	HiPerFET Power MOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFX15N100	文件：628.09 Kbytes Page：4 Pages	N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFX15N100	文件：367.92 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
DAM15N100B	文件：218.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
DAM15N100D	文件：233.38 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
DAM15N100S	文件：238.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
IXFH15N100	文件：372.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFH15N100P	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo	IXYS IXYS Corporation	IXYS
IXFH15N100P	文件：371.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.76Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea	IXYS IXYS Corporation	IXYS
IXFH15N100Q	文件：337.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea	IXYS IXYS Corporation	IXYS
IXFK15N100Q	文件：328.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR15N100	文件：329.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFT15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFT15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea	IXYS IXYS Corporation	IXYS
IXFV15N100P	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo	IXYS IXYS Corporation	IXYS
IXFV15N100PS	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo	IXYS IXYS Corporation	IXYS
IXGA15N100C	文件：103.99 Kbytes Page：2 Pages	IGBTLightspeedSeries Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeandresonant-mod	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號：
IXFX15N100
功能描述：
MOSFET 1KV 15A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	IXFX15N100	IXYS	24+	PLUS247	43		詢價(jià)
深圳市永貝爾科技有限公司	IXFX15N100	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
瀚佳科技(深圳)有限公司	IXFX15N100	IXYS	16+	TO-247	2100	公司大量全新現(xiàn)貨隨時(shí)可以發(fā)貨	詢價(jià)
深圳市艾宇欣科技有限公司	IXFX15N100	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳兆威電子有限公司	IXFX15N100	IXYS/艾賽斯	23+	TO-247	90000	只做原廠渠道價(jià)格優(yōu)勢可提供技術(shù)支持	詢價(jià)
深圳市科雨電子有限公司	IXFX15N100	IXYS	1809+	TO-247	326	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	IXFX15N100	IXYS/艾賽斯	23+	PLUS247	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IXFX15N100	IXYS/艾賽斯	23+	TO-247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市易訊博科技有限公司	IXFX15N100	IXYS	22+	NA	18	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市河鋒鑫科技有限公司	IXFX15N100	IXYS	22+	TO2473	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)

更多IXFX15N100供應(yīng)商更新時(shí)間2024-10-26 15:30:00

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