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首頁(yè) >IXFT15N100Q>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IXFT15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea	IXYS IXYS Corporation	IXYS
IXFT15N100Q3	文件：134.23 Kbytes Page：5 Pages	HiperFETTM Power MOSFETs Q3-Class N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?LowIntrinsicGateResistance ?InternationalStandardPackages ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applic	IXYS IXYS Corporation	IXYS
DAM15N100B	文件：218.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
DAM15N100D	文件：233.38 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
DAM15N100S	文件：238.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
IXFH15N100	文件：372.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFH15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFH15N100P	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo	IXYS IXYS Corporation	IXYS
IXFH15N100P	文件：371.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.76Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFH15N100Q	文件：337.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFH15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea	IXYS IXYS Corporation	IXYS
IXFK15N100Q	文件：328.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFK15N100Q	文件：137.46 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea	IXYS IXYS Corporation	IXYS
IXFR15N100	文件：329.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFT15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFV15N100P	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo	IXYS IXYS Corporation	IXYS
IXFV15N100PS	文件：181.5 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo	IXYS IXYS Corporation	IXYS
IXFX15N100	文件：367.92 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFX15N100	文件：628.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS
IXFX15N100	文件：116.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號(hào)：
IXFT15N100Q
功能描述：
MOSFET 15 Amps 1000V 0.725 Rds
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市永貝爾科技有限公司	IXFT15N100Q	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣	詢(xún)價(jià)
深圳市昊創(chuàng)電子有限公司	IXFT15N100Q	IXYS艾賽斯	1626+	TO-247	1652	代理品牌	詢(xún)價(jià)
艾睿國(guó)際（香港）有限公司	IXFT15N100Q	IXYS/艾賽斯	2021+	TO-268	100500	一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢(xún)價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	IXFT15N100Q	IXYS/艾賽斯	23+	TO-268	10000	公司只做原裝正品	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	IXFT15N100Q	IXYS	22+	TO2683 D3Pak (2 Leads + Tab) T	9000	原廠(chǎng)渠道,現(xiàn)貨配單	詢(xún)價(jià)
深圳市芯福林電子科技有限公司	IXFT15N100Q	IXYS	21+	TO2683 D3Pak (2 Leads + Tab) T	13880	公司只售原裝,支持實(shí)單	詢(xún)價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IXFT15N100Q	IXYS	23+	TO2683 D3Pak (2 Leads + Tab) T	9000	原裝正品，支持實(shí)單	詢(xún)價(jià)
深圳市鵬順微電子科技有限公司	IXFT15N100Q	IXYS	2022+	TO-268-3,D3Pak(2 引線(xiàn) + 接片	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷(xiāo)	詢(xún)價(jià)
深圳市富芯樂(lè)電子科技有限公司	IXFT15N100Q	IXYS	22+	TO-268	5000	絕對(duì)全新原裝現(xiàn)貨	詢(xún)價(jià)
深圳市達(dá)恩科技有限公司	IXFT15N100Q3	IXYS	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢(xún)價(jià)

更多IXFT15N100Q供應(yīng)商更新時(shí)間2024-12-31 13:34:00

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