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IXFT60N25Q

HiPerFET Power MOSFETs Q-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFH60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFH60N25Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK60N25Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFP60N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ60N25

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=60A@TC=25℃ DrainSourceVoltage-VDSS=250V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH60N25

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTH60N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighPowerdensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTT60N25

N-ChannelEnhancementMode

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IXFT60N25Q

  • 功能描述:

    MOSFET 60 Amps 250V 0.047 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
TO
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IXYS/艾賽斯
23+
TO-268
6000
原裝正品,支持實單
詢價
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
更多IXFT60N25Q供應商 更新時間2025-1-29 9:02:00