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MTY16N80E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTY16N80E
廠商型號(hào)

MTY16N80E

功能描述

TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

文件大小

239.48 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 16:20:00

MTY16N80E規(guī)格書詳情

TMOS E?FET Power Field Effect Transistor

N?Channel Enhancement?Mode Silicon Gate

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

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10000
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6680
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