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MTY10N100E規(guī)格書詳情
TMOS E-FET Power Eield Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage and high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTY10N100E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOT |
9315 |
3 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
ON |
24+ |
TO-3P |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
24+ |
1100 |
真實現(xiàn)貨庫存 |
詢價 | ||||
ON |
23+ |
TO-264 |
6893 |
詢價 | |||
MINI-CIRCUITS |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
T |
22+ |
TO |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
Mini-Circuits |
24+ |
1000 |
優(yōu)勢貨源原裝正品 |
詢價 | |||
T |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價 | ||
Mini-Circuits |
23+ |
N/A |
10000 |
原裝現(xiàn)貨 假一賠十 |
詢價 | ||
T |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價 |
