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IXFC16N80P

PolarHV HiPerFET Power MOSFET ISOPLUS220

N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFC16N80P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFH16N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFT16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80PS

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

MTY16N80E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTY16N80E

TMOSPOWERFET16AMPERES800VOLTSRDS(on)=0.50OHM

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    IXFC16N80P

  • 功能描述：

    MOSFET DIODE Id9 BVdass800

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS/艾賽斯
23+
ISOPLUS220
10000
公司只做原裝正品
 詢價
IXYS
22+
ISOPLUS220?
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
23+
ISOPLUS220?
9000
原裝正品，支持實單
 詢價
IXYS
2022+
ISOPLUS220?
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
原裝正品
23+
TO-220
60425
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
 詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
 詢價
IXYS
24+
ISOPLUSTO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IXYS/艾賽斯
22+
ISOPLUS220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多IXFC16N80P供應商 更新時間2024-12-26 15:09:00

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