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首頁 >IXFH12N100Q>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFH12N100Q	文件：146.65 Kbytes Page：4 Pages	HiPerFETTM Power MOSFETs Q Class Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
IXFH12N100Q	文件：372.44 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFM12N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM12N100	文件：82.12 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM12N100	文件：317.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR12N100	文件：309 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR12N100F	文件：91.92 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFETsISOPLUS247?F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSw	IXYS IXYS Corporation	IXYS
IXFR12N100Q	文件：160.52 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247QCLASS HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Corporation	IXYS
IXFR12N100Q	文件：33.66 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,HighdV/dtLowGateChargeandCapacitances HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Corporation	IXYS
IXFT12N100	文件：556.28 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou	IXYS IXYS Corporation	IXYS
IXFT12N100F	文件：99.7 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ?	IXYS IXYS Corporation	IXYS
IXFT12N100F	文件：112.65 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFT12N100Q	文件：146.65 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
IXFT12N100QHV	文件：205.72 Kbytes Page：5 Pages	HighVoltagePowerMOSFET	IXYS IXYS Corporation	IXYS
IXFV12N100P	文件：181.15 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc	IXYS IXYS Corporation	IXYS
IXFV12N100PS	文件：181.15 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc	IXYS IXYS Corporation	IXYS
IXGA12N100	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS
IXGA12N100A	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS
IXGH12N100	文件：151.39 Kbytes Page：5 Pages	LowVCE(sat)IGBTwithDiodeHighSpeedIGBTwithDiode Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Voltageratingguaranteedathightemperature(125C) Applicati	IXYS IXYS Corporation	IXYS
IXGP12N100	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號：
IXFH12N100Q
功能描述：
MOSFET 12 Amps 1000V 1.05 Ohms Rds
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳和潤天下電子科技有限公司	IXFH12N100Q	IXYS/艾賽斯	23+	TO-247	52388	原裝正品華強(qiáng)現(xiàn)貨	詢價
深圳市永貝爾科技有限公司	IXFH12N100Q	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價
深圳市艾宇欣科技有限公司	IXFH12N100Q	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價
深圳市科雨電子有限公司	IXFH12N100Q	IXYS	1809+	TO-247	326	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價
深圳市威爾健半導(dǎo)體有限公司	IXFH12N100Q	IXYS/艾賽斯	23+	TO247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市易訊博科技有限公司	IXFH12N100Q	IXYS	22+	NA	18	加我QQ或微信咨詢更多詳細(xì)信息,	詢價
京海半導(dǎo)體(深圳)有限公司	IXFH12N100Q	IXYS/艾賽斯	21+	TO247	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市河鋒鑫科技有限公司	IXFH12N100Q	IXYS	22+	TO2473	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳廊盛科技有限公司	IXFH12N100Q	IXYS/艾賽斯	2022	TO247	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IXFH12N100Q	IXYS/艾賽斯	23+	TO-247	6000	原裝正品，支持實(shí)單	詢價

更多IXFH12N100Q供應(yīng)商更新時間2024-11-15 8:30:00

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