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IXFM12N100

HiPerFET Power MOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM12N100

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM12N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR12N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR12N100F

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSw

IXYS

IXYS Corporation

IXFR12N100Q

HiPerFETPowerMOSFETsISOPLUS247QCLASS

HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFR12N100Q

N-ChannelEnhancementModeAvalancheRated,HighdV/dtLowGateChargeandCapacitances

HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFT12N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou

IXYS

IXYS Corporation

IXFT12N100F

HiPerRFPowerMOSFETs

IXYS

IXYS Corporation

IXFT12N100F

HiPerRFPowerMOSFETs

VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ?

IXYS

IXYS Corporation

IXFT12N100Q

HiPerFETTMPowerMOSFETsQClass

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFT12N100QHV

HighVoltagePowerMOSFET

IXYS

IXYS Corporation

IXFV12N100P

PolarHiPerFETPowerMOSFETs

PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc

IXYS

IXYS Corporation

IXFV12N100PS

PolarHiPerFETPowerMOSFETs

PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc

IXYS

IXYS Corporation

IXGA12N100

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGA12N100A

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGH12N100

LowVCE(sat)IGBTwithDiodeHighSpeedIGBTwithDiode

Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Voltageratingguaranteedathightemperature(125C) Applicati

IXYS

IXYS Corporation

IXGP12N100

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGP12N100A

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXTH12N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFM12N100

  • 功能描述：

    MOSFET 12 Amps 1000V 1.05 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
2023+
TO-247
50000
原裝現(xiàn)貨
 詢價(jià)
23+
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IXYS
24+
TO-3
536
詢價(jià)
IXYS
05+
原廠原裝
4284
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IXYS
18
TO-03
200
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IXYS/艾賽斯
專(zhuān)業(yè)鐵帽
1
原裝鐵帽專(zhuān)營(yíng),代理渠道量大可訂貨
 詢價(jià)
IXYS/艾賽斯
23+
TO-03
66800
原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
IXYS/艾賽斯
專(zhuān)業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
XILINX直供
BGA
3647
萊克訊每片來(lái)自原廠!價(jià)格超越代理!只做進(jìn)口原裝!
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更多IXFM12N100供應(yīng)商 更新時(shí)間2025-1-18 9:02:00

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