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IXFM5N100

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFP5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP5N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFP5N100PM

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTH5N100

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH5N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH5N100A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH5N100A

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM5N100

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=1000V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=2.4Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariations

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTM5N100

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM5N100A

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM5N100A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=1000V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=2Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTH5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTM5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

OM5N100NK

POWERMOSFETSINATO-3PACKAGE

ETCList of Unclassifed Manufacturers

未分類制造商

OM5N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

VCT5N100

CeramicTrimmerCapacitors5mm

VATRONICS

Vatronics Technologies Limited

詳細參數(shù)

  • 型號:

    IXFM5N100

  • 制造商:

    IXYS

  • 制造商全稱:

    IXYS Corporation

  • 功能描述:

    HIPERFET Power MOSFTETs

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
2022+
TO-204AE
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
IXYS/艾賽斯
23+
TO-264 PLUS
325680
原裝正品 華強現(xiàn)貨
詢價
IXYS場效應
100
原裝現(xiàn)貨,價格優(yōu)惠
詢價
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
詢價
NO
23+
MODULE
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IXYS
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IXYS
0032+
TO-220
22
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
IXY
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
詢價
IXYS
18
TO-03
200
進口原裝正品優(yōu)勢供應
詢價
更多IXFM5N100供應商 更新時間2025-1-15 9:02:00