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IXFT12N100

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou

IXYS

IXYS Corporation

IXFT12N100F

HiPerRF Power MOSFETs

VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ?

IXYS

IXYS Corporation

IXFT12N100Q

HiPerFETTM Power MOSFETs Q Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFT12N100F

HiPerRF Power MOSFETs

IXYS

IXYS Corporation

IXFT12N100QHV

High Voltage Power MOSFET

IXYS

IXYS Corporation

IXFV12N100P

PolarHiPerFETPowerMOSFETs

PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc

IXYS

IXYS Corporation

IXFV12N100PS

PolarHiPerFETPowerMOSFETs

PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc

IXYS

IXYS Corporation

IXGA12N100

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGA12N100A

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGH12N100

LowVCE(sat)IGBTwithDiodeHighSpeedIGBTwithDiode

Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Voltageratingguaranteedathightemperature(125C) Applicati

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFT12N100

  • 功能描述：

    MOSFET 12 Amps 1000V 1.05 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-268AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
IXYS/艾賽斯
2021+
TO-268
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實(shí)單
 詢價(jià)
更多IXFT12N100供應(yīng)商 更新時(shí)間2025-1-22 16:26:00

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