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IXTH12N100

MegaMOS FET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTH12N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH12N100L

LinearTM Power MOSFET w/ Extended FBSOA

Linear?PowerMOSFETw/ExtendedFBSOA N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackage ?DesignedforLinearOperation ?AvalancheRated ?MoldingEpoxyMeetsUL94V-0 FlammabilityClassification Advantages ?EasytoMount ?SpaceSavings ?High

IXYS

IXYS Corporation

IXTH12N100L

isc N-Channel MOSFET Transistor

·FEATURES ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH12N100Q

Not for New Designs: Contact the factory for lead times (part is still available for purchase).

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IXTH12N100Q

Package:TO-247-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 單個 描述:MOSFET N-CH 1000V 12A TO247

IXYS

IXYS Corporation

DAM12N100D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM12N100S

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

IXFH12N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N100

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號:

    IXTH12N100

  • 功能描述:

    MOSFET 12 Amps 1000V 1.05 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247(IXTH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
IXYS
23+
NA
140
專做原裝正品,假一罰百!
詢價
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
詢價
IXYS
24+
TO-247
2000
進(jìn)口原裝現(xiàn)貨假一罰十.價格優(yōu)勢.熱賣中..
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
TO-247
5540
公司只做原裝正品
詢價
IXYS/艾賽斯
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
更多IXTH12N100供應(yīng)商 更新時間2025-1-22 16:26:00