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IXFH12N90P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH12N90P

Polar Power MOSFET HiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFH12N90P

Power MOSFET

IXYS

IXYS Corporation

IXFH12N90P_V01

Power MOSFET

IXYS

IXYS Corporation

IXFH12N90Q

HiPerFETPowerMOSFETsQClass

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFH12N90Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFM12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFM12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFM12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT12N90Q

HiPerFETPowerMOSFETsQClass

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFV12N90P

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFV12N90P

PowerMOSFET

IXYS

IXYS Corporation

IXFV12N90PS

PowerMOSFET

IXYS

IXYS Corporation

IXFV12N90PS

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFZ12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXGH12N90C

HiPerFASTIGBTLightspeedSeries

Features ?VeryhighfrequencyIGBT ?NewgenerationHDMOSTMprocess ?InternationalstandardpackageJEDECTO-247 ?Highpeakcurrenthandlingcapability Applications ?PFCcircuit ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Switch-modeandresonant-modepowersupplies ?High

IXYS

IXYS Corporation

IXGX12N90C

HiPerFASTIGBTLightspeedSeries

IXYS

IXYS Corporation

IXTH12N90

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH12N90

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage-:VDSS=900V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariations

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTM12N90

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFH12N90P

  • 功能描述：

    MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
65493
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
Littelfuse/IXYS
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
IXYS
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
IXYS
23+
TO247
8653
全新原裝優(yōu)勢(shì)
 詢價(jià)
IXYS
21+
TO-247
12588
原裝正品,自己庫(kù)存 假一罰十
 詢價(jià)
IXYS
24+
TO-247
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IXYS
1931+
N/A
18
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 詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
5425
公司只做原裝正品
 詢價(jià)
更多IXFH12N90P供應(yīng)商 更新時(shí)間2024-12-27 14:13:00

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