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IXFT12N90Q

HiPerFET Power MOSFETs Q Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFV12N90P

PowerMOSFET

IXYS

IXYS Corporation

IXFV12N90P

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFV12N90PS

PowerMOSFET

IXYS

IXYS Corporation

IXFV12N90PS

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFZ12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXGH12N90C

HiPerFASTIGBTLightspeedSeries

Features ?VeryhighfrequencyIGBT ?NewgenerationHDMOSTMprocess ?InternationalstandardpackageJEDECTO-247 ?Highpeakcurrenthandlingcapability Applications ?PFCcircuit ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Switch-modeandresonant-modepowersupplies ?High

IXYS

IXYS Corporation

IXGX12N90C

HiPerFASTIGBTLightspeedSeries

IXYS

IXYS Corporation

IXTH12N90

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage-:VDSS=900V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariations

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH12N90

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM12N90

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM12N90

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFT12N90Q

  • 功能描述：

    MOSFET 12 Amps 900V 0.9 Ohm Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-268S
52388
原裝正品 華強(qiáng)現(xiàn)貨
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實單
 詢價
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
更多IXFT12N90Q供應(yīng)商 更新時間2024-12-31 17:05:00

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