首頁 >IXGH12N90C>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

IXGH12N90C

HiPerFAST IGBT Lightspeed Series

Features ?VeryhighfrequencyIGBT ?NewgenerationHDMOSTMprocess ?InternationalstandardpackageJEDECTO-247 ?Highpeakcurrenthandlingcapability Applications ?PFCcircuit ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Switch-modeandresonant-modepowersupplies ?High

IXYS

IXYS Corporation

IXGH12N90C

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 900V 24A 100W TO247AD

IXYS

IXYS Corporation

IXGH12N90C_03

HiPerFAST IGBT Lightspeed Series

IXYS

IXYS Corporation

12N90

12A,900VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

12N90

FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC12N90C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.95Ω(Max)@VGS=10V DESCRIPTION ·Switchmodepowersupply ·DC-DCconverters ·ACmotorcontrol

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFH12N90P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N90P

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFH12N90P

PowerMOSFET

IXYS

IXYS Corporation

IXFH12N90Q

HiPerFETPowerMOSFETsQClass

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFH12N90Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFT12N90Q

HiPerFETPowerMOSFETsQClass

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFV12N90P

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFV12N90P

PowerMOSFET

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IXGH12N90C

  • 制造商：

    IXYS

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列：

    HiPerFAST?, Lightspeed?

  • 包裝：

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    3V @ 15V，12A

  • 開關(guān)能量：

    320μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td（開/關(guān)）值：

    20ns/135ns

  • 測(cè)試條件：

    720V，12A，22 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247AD

  • 描述：

    IGBT 900V 24A 100W TO247AD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYSCORPORAT
05+
原廠原裝
11931
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
20+
TO-247
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
IXYS
16+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
TO-247
1300
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS
22+
TO-247
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
5540
公司只做原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多IXGH12N90C供應(yīng)商 更新時(shí)間2024-11-15 16:24:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多