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IXFH21N50Q

HiPerFET Power MOSFETs MOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM21N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM21N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM21N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT21N50F

HiPerRFPowerMOSFETs

HiPerRFPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance

IXYS

IXYS Corporation

IXFT21N50Q

HiPerFETPowerMOSFETsMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXTH21N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH21N50

MegaMOSFET

N-ChannelEnhancementMode Features Internationalstandardpackages LowRDS(on)HDMOS?process Ruggedpolysilicongatecellstructure Lowpackageinductance(

IXYS

IXYS Corporation

IXTH21N50

N-ChannelEnhancementMode

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IXTM21N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號:

    IXFH21N50Q

  • 功能描述:

    MOSFET 21 Amps 500V 0.25 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
23+
TO-247
32189
原裝正品 華強現(xiàn)貨
詢價
IXYS
24+
TO-247
920
詢價
IXYS
24+
(TO3P)
133
原裝現(xiàn)貨假一罰十
詢價
IXYS
1816+
TO-3P
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
IXYS
24+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
TO-247
6530
公司只做原裝正品
詢價
更多IXFH21N50Q供應(yīng)商 更新時間2025-1-31 8:30:00