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IXFH35N30

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH35N30

HiPerFET Power MOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH35N30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=100mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFM35N30

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM35N30

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFZ35N30

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXTH35N30

MegaMOSTMFET

N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH35N30

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PJM35N30DI

N-ChannelPowerMOSFET

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導體東莞市平晶半導體科技有限公司

RM35N30DF

N-ChannelEnhancementModePowerMOSFET

RECTRON

Rectron Semiconductor

RM35N30DN

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=30V,ID=35A RDS(ON)

RECTRON

Rectron Semiconductor

詳細參數

  • 型號：

    IXFH35N30

  • 功能描述：

    MOSFET 300V 35A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
17+
TO-3P
6200
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-3P
2000
專做原裝正品,假一罰百!
 詢價
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
2020+
TO247
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IXYS
18+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS/艾賽斯
2021+
TO-3P
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
 詢價
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-247
5230
公司只做原裝正品
 詢價
IXYS/艾賽斯
23+
TO-247
50000
全新原裝正品現貨,支持訂貨
 詢價
更多IXFH35N30供應商 更新時間2024-10-27 16:00:00

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