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IXFK120N25P

Polar Power MOSFET HiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXFK120N25P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFQ120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFT120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFX120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFX120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXTK120N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Advantages ?Easyto

IXYS

IXYS Corporation

IXTK120N25

HighCurrentMegaMOSFET

IXYS

IXYS Corporation

IXTK120N25P

PolarHTPowerMOSFET

N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTN120N25

HighCurrentMegaMOSFET

IXYS

IXYS Corporation

RCJ120N25

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RCJ120N25

Nch250V12APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RCX120N25

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RCX120N25

10VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RDN120N25

Switching(250V,12A)

Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)Exellentresistancetodamagefromstaticelectricity. Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

UPD120N25TA

THREE-TERMINALLOW-DROPOUTPOSITIVE-VOLTAGEREGULATOR(OUTPUTCURRENT:0.3A)

Features ?Outputcurrent:0.3A ?On-chipovercurrentprotectioncircuit ?On-chipthermalprotectioncircuit ?Smallcircuitoperationcurrent:60μATYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD120N25TA

THREE-TERMINALLOW-DROPOUTPOSITIVE-VOLTAGEREGULATOR(OUTPUTCURRENT:0.3A)

TheμPD120Nxxseriesprovideslow-voltageoutputregulatorswiththeoutputcurrentcapacitanceof0.3A.Theoutputvoltagevariesaccordingtotheproduct(1.5V,1.8V,2.5V,or3.3V).ThecircuitcurrentislowduetotheCMOSstructure,sothepowerconsumptionintheICscanbereduced.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFK120N25P

  • 功能描述：

    MOSFET 120 Amps 250V 0.024 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-264AA(IXFK)
30000
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IXYS/艾賽斯
23+
TO-264
52388
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24+
8866
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IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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IXYS
24+
TO-3PL
553
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IXYS
1931+
N/A
18
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IXYS
1809+
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326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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IXYS
22+
NA
18
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IXYS/艾賽斯
21+
TO264
10000
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IXYS
22+
TO2643 TO264AA
9000
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更多IXFK120N25P供應(yīng)商 更新時(shí)間2024-12-31 17:05:00

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