首頁 >RCX120N25>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

RCX120N25

10V Drive Nch MOSFET

ROHMRohm

羅姆羅姆半導體集團

RCX120N25

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

RCX120N25

包裝：管件 封裝/外殼：TO-220-3 整包 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 250V 12A TO220FM

Rohm Semiconductor

Rohm Semiconductor

Rohm Semiconductor

IXFH120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFK120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFK120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXFK120N25P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFT120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFX120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFX120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXTK120N25

HighCurrentMegaMOSFET

IXYS

IXYS Corporation

IXTK120N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Advantages ?Easyto

IXYS

IXYS Corporation

IXTK120N25P

PolarHTPowerMOSFET

N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTN120N25

HighCurrentMegaMOSFET

IXYS

IXYS Corporation

RCJ120N25

Nch250V12APowerMOSFET

ROHMRohm

羅姆羅姆半導體集團

RCJ120N25

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

RDN120N25

Switching(250V,12A)

Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)Exellentresistancetodamagefromstaticelectricity. Application Switching

ROHMRohm

羅姆羅姆半導體集團

產(chǎn)品屬性

  • 產(chǎn)品編號：

    RCX120N25

  • 制造商：

    Rohm Semiconductor

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個

  • 包裝：

    管件

  • FET 類型：

    N 通道

  • 技術：

    MOSFET（金屬氧化物）

  • 25°C 時電流 - 連續(xù)漏極 (Id)：

    12A（Ta）

  • 驅動電壓（最大 Rds On，最小 Rds On）：

    10V

  • Vgs（最大值）：

    ±30V

  • 功率耗散（最大值）：

    2.23W（Ta），40W（Tc）

  • 工作溫度：

    150°C（TJ）

  • 安裝類型：

    通孔

  • 供應商器件封裝：

    TO-220FM

  • 封裝/外殼：

    TO-220-3 整包

  • 描述：

    MOSFET N-CH 250V 12A TO220FM

供應商型號品牌批號封裝庫存備注價格
ROHM
1844+
TO-220FM
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
ROHM
21+
TO-220FM
21000
一級代理進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
Rohm
20+
N/A
594
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
ROHM/羅姆
2021+
TO-220FP-3
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ROHM
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ROHM/羅姆
23+
TO-220FM
10000
公司只做原裝正品
 詢價
Rohm Semiconductor
22+
TO2202
9000
原廠渠道,現(xiàn)貨配單
 詢價
ROHM/羅姆
23+
TO-220FM
6000
原裝正品，支持實單
 詢價
ROHM
21+
TO-220FM
100
全新原裝鄙視假貨15118075546
 詢價
ROHM/羅姆
22+
TO-220FM
50000
原裝正品.假一罰十
 詢價
更多RCX120N25供應商 更新時間2025-1-8 17:38:00

相關規(guī)格書

更多

相關庫存

更多