首頁 >IXFK24N100>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IXFK24N100 | HiPerRF Power MOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ? | IXYS IXYS Corporation | IXYS | |
IXFK24N100 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IXFK24N100 | HiPerFETTM Power MOSFETs | IXYS IXYS Corporation | IXYS | |
HiPerRF Power MOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ? | IXYS IXYS Corporation | IXYS | ||
HiPerRF Power MOSFETs F-Class: MegaHertz Switching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance | IXYS IXYS Corporation | IXYS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Advance Technical Information HiperFETPowerMOSFETsQ3-Class N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applica | IXYS IXYS Corporation | IXYS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTM Power MOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerFET Power MOSFETs | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號:
IXFK24N100
- 功能描述:
MOSFET 1KV 24A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS(艾賽斯) |
2023 |
10000 |
全新、原裝 |
詢價 | |||
IXYS |
24+ |
TO-264AA |
50 |
詢價 | |||
IXY |
05+ |
TO-3PL |
500 |
原裝進(jìn)口 |
詢價 | ||
IXYS |
23+ |
TO-3PL |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IXYS |
24+ |
to264 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
IXYS |
20+ |
TO-264 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IXYS |
2020+ |
TO-264 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IXYS |
24+ |
TO-3PL |
2050 |
公司大量全新原裝 正品 隨時可以發(fā)貨 |
詢價 | ||
IXYS |
24+ |
TO-3PL |
264 |
詢價 |
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