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IXFK180N07

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=180A@TC=25℃ ·DrainSourceVoltage :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK180N07

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK180N07

HiPerFET Power MOSFETs

HiperFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?AvalancheRated ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensi

IXYS

IXYS Corporation

IXFK180N07

Power MOSFETs

IXYS

IXYS Corporation

IXFK180N07_V01

Power MOSFETs

IXYS

IXYS Corporation

IXFN180N07

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated

IXYS

IXYS Corporation

IXFR180N07

HiPerFETPowerMOSFETsISOPLUS247

SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX180N07

PowerMOSFETs

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFK180N07

  • 功能描述：

    MOSFET 180 Amps 70V 0.006 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264
8866
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IXY
05+
TO-3PL
500
原裝進口
 詢價
IXYS
23+
TO-3PL
5000
原裝正品,假一罰十
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IXYS
20+
TO-264
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
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IXYS
2020+
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
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IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
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IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
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IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
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IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
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更多IXFK180N07供應商 更新時間2025-1-22 13:30:00

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