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首頁(yè) >IXFH6N100>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IXFH6N100	文件：77.8 Kbytes Page：4 Pages	HiPerFET Power MOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH6N100	文件：295.27 Kbytes Page：8 Pages	HIPERFET Power MOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH6N100	文件：372.38 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFH6N100F	文件：820.74 Kbytes Page：4 Pages	Power MOSFETs Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch	IXYS IXYS Corporation	IXYS
IXFH6N100F	文件：372.67 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFH6N100Q	文件：124.68 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-Class Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
IXFH6N100Q	文件：373.14 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFM6N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM6N100	文件：77.8 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFT6N100F	文件：820.74 Kbytes Page：4 Pages	PowerMOSFETs Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch	IXYS IXYS Corporation	IXYS
IXFT6N100Q	文件：124.68 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
MTH6N100	文件：293.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
MTV6N100E	文件：287.06 Kbytes Page：11 Pages	PowerFieldEffectTransistor	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MTV6N100E	文件：298.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
MTV6N100E	文件：262.47 Kbytes Page：10 Pages	TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM TMOSE-FET? PowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresur	Motorola Motorola, Inc	Motorola
MTW6N100	文件：195.35 Kbytes Page：8 Pages	TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO	Motorola Motorola, Inc	Motorola
MTW6N100E	文件：195.35 Kbytes Page：8 Pages	TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO	Motorola Motorola, Inc	Motorola
MTW6N100E	文件：322.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
MTW6N100E	文件：214.54 Kbytes Page：7 Pages	N??hannelPowerMOSFET	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
OM6N100NK	文件：19.02 Kbytes Page：2 Pages	POWERMOSFETSINATO-3PACKAGE	ETCList of Unclassifed Manufacturers 未分類制造商	ETC

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詳細(xì)參數(shù)

型號(hào)：
IXFH6N100
功能描述：
MOSFET 1KV 6A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IXFH6N100	IXYS/艾賽斯	17+	TO-247	31518	原裝正品可含稅交易	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IXFH6N100		24+		8866		詢價(jià)
深圳市永貝爾科技有限公司	IXFH6N100	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IXFH6N100	IXYS	1822+	TO-247	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
深圳市賽芯源科技有限公司	IXFH6N100	IXYS	18+	TO-247AD	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IXFH6N100	IXYS	20+	TO-247	36900	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票	詢價(jià)
瀚佳科技(深圳)有限公司	IXFH6N100	IXYS	18+	TO-247	2050	公司大量全新原裝正品隨時(shí)可以發(fā)貨	詢價(jià)
深圳市興燦科技有限公司	IXFH6N100	IXYS	24+	TO-247	553		詢價(jià)
深圳兆威電子有限公司	IXFH6N100	IXYS/艾賽斯	23+	TO-247	90000	只做原廠渠道價(jià)格優(yōu)勢(shì)可提供技術(shù)支持	詢價(jià)
深圳市艾宇欣科技有限公司	IXFH6N100	IXYS	1931+	N/A	241	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)

更多IXFH6N100供應(yīng)商更新時(shí)間2024-10-27 14:00:00

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