首頁(yè) >IXFH5N100P>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXFH5N100P | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IXFH5N100P | Polar Power MOSFET HiPerFET | IXYS IXYS Corporation | IXYS | |
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarPowerMOSFETHiPerFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=1000V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=2.4Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariations | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=1000V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=2Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
POWERMOSFETSINATO-3PACKAGE | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
CeramicTrimmerCapacitors5mm | VATRONICS Vatronics Technologies Limited | VATRONICS |
詳細(xì)參數(shù)
- 型號(hào):
IXFH5N100P
- 制造商:
IXYS
- 制造商全稱(chēng):
IXYS Corporation
- 功能描述:
Polar Power MOSFET HiPerFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IXYS/艾賽斯 |
23+ |
TO-247 |
59580 |
原裝正品 華強(qiáng)現(xiàn)貨 |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢(xún)價(jià) | ||
IXYS |
20+ |
TO-247 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
5540 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
2022 |
TO-247 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
21255 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
6000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
ixys |
2023+ |
TO-247 |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | ||
IXYS/艾賽斯 |
23+ |
NA/ |
8790 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢(xún)價(jià) |
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