首頁 >IXFH7N90Q>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IXFH7N90Q

HiPerFETTM Power MOSFETs Q-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitch

IXYS

IXYS Corporation

IXFH7N90Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH7N90Q_02

HiPerFET Power MOSFETs Q-Class

IXYS

IXYS Corporation

IXFM7N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT7N90Q

HiPerFETTMPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitch

IXYS

IXYS Corporation

IXFT7N90Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

SSF7N90A

N-CHANNELPOWERMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSH7N90A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSH7N90A

N-CHANNELPOWERMOSFET

N-CHANNELPOWERMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:25μA(Max.)@VDS=900V ?LowerRDS(ON):1.247?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SW7N90

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN. ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWF7N90

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN. ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

TSM7N90

900VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

TSM7N90

900VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

TSM7N90CI

900VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

TSM7N90CZ

900VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號:

    IXFH7N90Q

  • 功能描述:

    MOSFET 7 Amps 900V 1.5W Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
23+
TO-3P
6000
專做原裝正品,假一罰百!
詢價
IXYS
24+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
24+
TO-247
560
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS/艾賽斯
2021+
TO-3P
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
詢價
I
23+
TO-247AD
10000
公司只做原裝正品
詢價
IXYS/艾賽斯
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多IXFH7N90Q供應(yīng)商 更新時間2024-12-31 17:05:00