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IXFK21N100Q

HiPerFET Power MOSFETs Q-CLASS

HiPerFET?PowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on

IXYS

IXYS Corporation

IXFK21N100Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN21N100Q

HiPerFETTMPowerMOSFETsQ-Class

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Int

IXYS

IXYS Corporation

IXFN21N100Q

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage -VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·Switchingapplication ·DC-DCconverters ·Batterychargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR21N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR21N100Q

HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface)

IXYS

IXYS Corporation

IXFX21N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX21N100F

HiPerRFPowerMOSFETs

Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D

IXYS

IXYS Corporation

IXFX21N100F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D

IXYS

IXYS Corporation

IXFX21N100Q

HiPerFETPowerMOSFETsQ-CLASS

HiPerFET?PowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFK21N100Q

  • 功能描述：

    MOSFET 21 Amps 1000V 0.5 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264AA(IXFK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-264
59580
原裝正品 華強(qiáng)現(xiàn)貨
 詢價
IXYS
24+
TIO264
5000
只做原裝公司現(xiàn)貨
 詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
185
詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
更多IXFK21N100Q供應(yīng)商 更新時間2025-1-23 10:12:00

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