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IXFK35N50

HiPerFET Power MOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifi

IXYS

IXYS Corporation

IXFK35N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFPS35N50L

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS35N50L

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent LowTrrandSoftDiodeRecovery HighPerformanceOptimisedAnti-parallelDiode Application

IRF

International Rectifier

IRFPS35N50LPBF

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS35N50LPBF

SMPSMOSFET

IRF

International Rectifier

IXFN35N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFX35N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX35N50

PowerMOSFETs

IXYS

IXYS Corporation

SIHFPS35N50L

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFK35N50

  • 功能描述：

    MOSFET 35 Amps 500V 0.15 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
17+
TO-3PL
6200
詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IXYS
23+
TO-3PL
4500
專做原裝正品,假一罰百!
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IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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IXYS
24+
TO-3PL
266
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
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IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
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IXYS
22+
TO2643 TO264AA
9000
原廠渠道,現(xiàn)貨配單
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更多IXFK35N50供應(yīng)商 更新時(shí)間2025-1-22 12:09:00

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