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IRFPS35N50L

HEXFET Power MOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent LowTrrandSoftDiodeRecovery HighPerformanceOptimisedAnti-parallelDiode Application

IRF

International Rectifier

IRFPS35N50L

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導體

IRFPS35N50LPBF

SMPS MOSFET

IRF

International Rectifier

IRFPS35N50LPBF

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導體

IXFK35N50

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifi

IXYS

IXYS Corporation

IXFK35N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFN35N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFX35N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX35N50

PowerMOSFETs

IXYS

IXYS Corporation

SIHFPS35N50L

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFPS35N50L

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    HEXFETPower MOSFET

供應商型號品牌批號封裝庫存備注價格
IR
23+
SUPER-247
35890
詢價
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
IR
16+
原廠封裝
69
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-3P
5000
原裝正品,假一罰十
 詢價
IR
23+
TO-247
3000
全新原裝
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
2023+
TO-247AA
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IR
2020+
TO-247AA
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IR
24+
TO-247
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
IR
21+
TO247
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRFPS35N50L供應商 更新時間2024-12-23 17:15:00

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