首頁(yè) >IRFPS35N50LPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFPS35N50LPBF | SMPS MOSFET
| IRF International Rectifier | IRF | |
IRFPS35N50LPBF | IRFPS35N50L FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFPS35N50L FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent LowTrrandSoftDiodeRecovery HighPerformanceOptimisedAnti-parallelDiode Application | IRF International Rectifier | IRF | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifi | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
IRFPS35N50L FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
IRFPS35N50LPBF
- 功能描述:
MOSFET N-Chan 500V 34 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR/VISH |
24+ |
65230 |
詢價(jià) | ||||
VISHAY |
1503+ |
SUPER-247 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SUPER247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO274AA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Vishay Siliconix |
21+ |
TO274AA |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
VISHAY |
23+ |
TO-247 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
Vishay Siliconix |
23+ |
TO274AA |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
TO-274AA |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
VISHAY/威世 |
22+ |
SUPER247 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) |
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