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IXFL44N60

HiPerFET Power MOSFETs Single Die MOSFET

IXYS

IXYS Corporation

IXFE44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?Fastin

IXYS

IXYS Corporation

IXFK44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFK44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFN44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwit

IXYS

IXYS Corporation

IXFR44N60

HiPerFETTMPowerMOSFETsISOPLUS247

IXYS

IXYS Corporation

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier

IXYS

IXYS Corporation

IXFX44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MS44N60T

LowrDS(on)trenchtechnology

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFL44N60

  • 功能描述：

    MOSFET 44 Amps 600V 0.13W Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
ISOPLUS264?
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
IXYS/艾賽斯
23+
ISOPLUS264
10000
公司只做原裝正品
 詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
ISOPLUS264?
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS
21+
ISOPLUS264?
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IXYS/艾賽斯
23+
ISOPLUS264
6000
原裝正品，支持實(shí)單
 詢價(jià)
IXYS
2022+
ISOPLUS264?
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
IXYS/艾賽斯
22+
ISOPLUS264
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
更多IXFL44N60供應(yīng)商 更新時(shí)間2025-1-1 14:14:00

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