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IXFH21N50F

HiPerRF Power MOSFETs

HiPerRFPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance

IXYS

IXYS Corporation

IXFH21N50Q

HiPerFETPowerMOSFETsMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM21N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM21N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM21N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT21N50F

HiPerRFPowerMOSFETs

HiPerRFPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance

IXYS

IXYS Corporation

IXFT21N50Q

HiPerFETPowerMOSFETsMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXTH21N50

MegaMOSFET

N-ChannelEnhancementMode Features Internationalstandardpackages LowRDS(on)HDMOS?process Ruggedpolysilicongatecellstructure Lowpackageinductance(

IXYS

IXYS Corporation

IXTH21N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH21N50

N-ChannelEnhancementMode

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IXTM21N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM21N50

N-ChannelEnhancementMode

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IXTM21N50

MegaMOSFET

N-ChannelEnhancementMode Features Internationalstandardpackages LowRDS(on)HDMOS?process Ruggedpolysilicongatecellstructure Lowpackageinductance(

IXYS

IXYS Corporation

SMOS21N50

PowerMOSFETs

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SMOS21N50

PowerMOSFETs

ETCList of Unclassifed Manufacturers

未分類制造商

詳細參數(shù)

  • 型號：

    IXFH21N50F

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
1931+
N/A
25
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS-RF
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
 詢價
IXYS/艾賽斯
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
22+
NA
25
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS/艾賽斯
21+
TO247
10000
原裝現(xiàn)貨假一罰十
 詢價
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS/艾賽斯
2022
TO247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IXYS
21+
TO2473
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
TO-247
6000
原裝正品，支持實單
 詢價
更多IXFH21N50F供應(yīng)商 更新時間2024-12-27 10:18:00

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