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IXFH13N65

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

13N65A

13A650VN-channelenhancementmodefieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

13N65B

N-ChannelMOSFET650V,14A,0.46(ohm)

MGCHIP

MagnaChip Semiconductor.

CEB13N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED13N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF13N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP13N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU13N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

DTQ13N65GN

90mΩ,650VGaNHEMTWithIntegratedDriverandProtection

1.0Features ?650VenhancementmodeHEMTwithintegrateddriver ?90mΩRDSON ?5VPWMinput ?UVLOprotection ?Zeroreverserecovery ?Lowquiescentcurrentdriver ?Adjustableturn-onslewrate ?Dv/Dtimmunitybothwith/withoutdriver-supply ?Lowpropagationdelayforupto2MHzoper

DINTEK

DinTek Semiconductor Co,.Ltd

DTQ13N65GN-EVB

90mΩ,650VGaNHEMTWithIntegratedDriverandProtection

1.0Features ?650VenhancementmodeHEMTwithintegrateddriver ?90mΩRDSON ?5VPWMinput ?UVLOprotection ?Zeroreverserecovery ?Lowquiescentcurrentdriver ?Adjustableturn-onslewrate ?Dv/Dtimmunitybothwith/withoutdriver-supply ?Lowpropagationdelayforupto2MHzoper

DINTEK

DinTek Semiconductor Co,.Ltd

詳細(xì)參數(shù)

  • 型號：

    IXFH13N65

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    HIPERFET Power MOSFTETs

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
17+
TO-3P
6200
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-3P
6000
專做原裝正品,假一罰百!
 詢價
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
24+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
 詢價
IXYS/艾賽斯
22+
247
6000
十年配單,只做原裝
 詢價
IXYS/艾賽斯
23+
TO-247
6000
原裝正品，支持實單
 詢價
IXYS
22+
TO-3P
6000
絕對全新原裝現(xiàn)貨
 詢價
IXYS/艾賽斯
23+
TO-3P
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
更多IXFH13N65供應(yīng)商 更新時間2025-2-5 16:00:00

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