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首頁 >IXFC52N30P>規(guī)格書列表

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IXFC52N30P	文件：322.93 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFC52N30P	文件：97.5 Kbytes Page：5 Pages	PolarHTTM HiPerFET Power MOSFET	IXYS IXYS Corporation	IXYS
IXFC52N30P_08	文件：151.12 Kbytes Page：5 Pages	PolarHT Power MOSFET HiPerFET	IXYS IXYS Corporation	IXYS
IXFH52N30P	文件：190.5 Kbytes Page：5 Pages	PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFH52N30P	文件：195.18 Kbytes Page：6 Pages	PowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFH52N30P	文件：371.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH52N30Q	文件：372.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH52N30Q	文件：70.63 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche	IXYS IXYS Corporation	IXYS
IXFK52N30	文件：328.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK52N30Q	文件：70.63 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche	IXYS IXYS Corporation	IXYS
IXFT52N30Q	文件：70.63 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche	IXYS IXYS Corporation	IXYS
IXFV52N30P	文件：190.5 Kbytes Page：5 Pages	PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFV52N30P	文件：195.18 Kbytes Page：6 Pages	PowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFV52N30PS	文件：195.18 Kbytes Page：6 Pages	PowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFV52N30PS	文件：190.5 Kbytes Page：5 Pages	PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity	IXYS IXYS Corporation	IXYS
IXTQ52N30P	文件：588.11 Kbytes Page：5 Pages	PolarHTPowerMOSFET Polar?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switch-ModeandResonant-ModePowerSuppli	IXYS IXYS Corporation	IXYS
IXTQ52N30P	文件：146.19 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFETs	IXYS IXYS Corporation	IXYS
IXTQ52N30P	文件：301.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?DrainSourceVoltage-:VDSS=300V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=66mΩ(Max) ?FastSwitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switch-ModeandResonant-ModePowerS	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTT52N30P	文件：146.19 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFETs	IXYS IXYS Corporation	IXYS
IXTT52N30P	文件：588.11 Kbytes Page：5 Pages	PolarHTPowerMOSFET Polar?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switch-ModeandResonant-ModePowerSuppli	IXYS IXYS Corporation	IXYS

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型號(hào)：
IXFC52N30P
功能描述：
MOSFET 24 Amps 300V 0.066 Rds
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	IXFC52N30P	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市華來深電子有限公司	IXFC52N30P	IXYS	23+	TO-220	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	IXFC52N30P	IXYS/艾賽斯	23+	ISOPLUS220	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	IXFC52N30P	IXYS	22+	ISOPLUS220?	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IXFC52N30P	IXYS/艾賽斯	23+	ISOPLUS22	43000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IXFC52N30P	IXYS/艾賽斯	23+	ISOPLUS220	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市鵬順微電子科技有限公司	IXFC52N30P	IXYS	2022+	ISOPLUS220?	38550	全新原裝支持表配單中國著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市能元時(shí)代電子有限公司	IXFC52N30P	原裝正品	23+	TO-220	60551	##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IXFC52N30P	IXYS/艾賽斯	22+	ISOPLUS220	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市星辰微電科技有限公司	IXFC52N30P	IXYS(艾賽斯)	23+	N/A	7500	IXYS(艾賽斯)全系列在售	詢價(jià)

更多IXFC52N30P供應(yīng)商更新時(shí)間2024-12-27 9:00:00

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