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IXFE24N100

Single MOSFET Die

HiPerFETPowerMOSFET SingleMOSFETDie Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?FastintrinsicRectifier Applications ?DC-DCconverters ?Batte

IXYS

IXYS Corporation

IXFF24N100

HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM

Features ?HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode ?ISOPLUSI4-PAC?highvoltagepackage -isolatedbacksurface -enlargedcree

IXYS

IXYS Corporation

IXFK24N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK24N100

HiPerFETTMPowerMOSFETs

IXYS

IXYS Corporation

IXFK24N100

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?

IXYS

IXYS Corporation

IXFK24N100F

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?

IXYS

IXYS Corporation

IXFK24N100F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance

IXYS

IXYS Corporation

IXFK24N100F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN24N100

HiPerRFPowerMOSFETs

Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu

IXYS

IXYS Corporation

IXFN24N100

HiPerFET-TMPowerMOSFET

Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFE24N100

  • 功能描述：

    MOSFET 22 Amps 1000V 0.39 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價格優(yōu)惠.全新原裝正品
 詢價
IXYS
23+
MOSFETN-CH1000V22AISOPLU
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
SOT-227
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
SOT2274 miniBLOC
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
22+
MODULE
8000
原裝正品支持實單
 詢價
IXYS
23+
SOT2274 miniBLOC
9000
原裝正品，支持實單
 詢價
IXYS
2022+
SOT-227-4,miniBLOC
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多IXFE24N100供應(yīng)商 更新時間2025-2-3 13:02:00

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