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NP88N04CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04CHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N04DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04DHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N04DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04EHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N04EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04KHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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22+
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8200
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13+
NA
37238
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AP/富鼎
2020+
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4500
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1813
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22+
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25000
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23+
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9600
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23+24
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16790
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23+
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1873
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10000
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更多AP88N04CHE供應(yīng)商 更新時(shí)間2025-2-11 14:10:00

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