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首頁 >NP88N04DHE>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NP88N04DHE	文件：227.48 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04DHE	文件：313.85 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04DHE	文件：242.43 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04DHE-S12-AY	文件：227.48 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04DHE-S12-AY	文件：313.85 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04DHE-S12-AYNote1,2	文件：314.44 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04EHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04EHE	文件：306.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04EHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04KHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04KHE	文件：306.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04KHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04KUG	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04MHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04MHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04MHE	文件：333.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04MHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04NHE	文件：242.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04NHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

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詳細(xì)參數(shù)

型號(hào)：
NP88N04DHE
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 88A I(D) | TO-262AA

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	NP88N04DHE	NEC	24+	TO-262	8866		詢價(jià)
深圳市近平電子有限公司	NP88N04DHE	NEC	6000	面議	19	TO-262	詢價(jià)
深圳市賽芯源科技有限公司	NP88N04EHE	日本NEC	18+	TO-263	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	NP88N04EHE	NEC	23+	TO-263	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	NP88N04EHE	NEC	TO-263	22+	6000	十年配單,只做原裝	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	NP88N04EHE	NEC	23+	TO-263	33000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	NP88N04EHE	NEC	23+	TO-263	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	NP88N04EHE	NEC	22+	TO-263	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市鵬和科技有限公司	NP88N04KHE	N	24+	TO-263	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	NP88N04KHE	NEC	1822+	TO-263	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)

更多NP88N04DHE供應(yīng)商更新時(shí)間2024-12-28 15:30:00

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