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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NP88N055DHE	文件：207.82 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N055DHE	文件：294.3 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055DHE	文件：241.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP88N055DHE-S12-AY	文件：207.82 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N055DHE-S12-AY	文件：294.3 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055DHE-S12-AYNote1,2	文件：294.88 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055DLE	文件：213.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N055DLE	文件：421.44 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055DLE	文件：242.58 Kbytes Page：22 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP88N055EHE	文件：305.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP88N055EHE	文件：294.3 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055EHE	文件：207.82 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N055ELE	文件：213.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N055ELE	文件：306.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP88N055ELE	文件：421.44 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055KHE	文件：306.17 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP88N055KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055KHE	文件：294.3 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055KHE	文件：207.82 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N055KLE	文件：213.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC

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詳細(xì)參數(shù)

型號(hào)：
NP88N055DHE
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-262AA

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	NP88N055DHE	NEC	24+	TO-262	8866		詢價(jià)
深圳市博浩通科技有限公司	NP88N055DHE	NEC	23+	TO-262	12224	全新原裝	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	NP88N055DHE	NEC	1822+	TO-262	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
深圳市近平電子有限公司	NP88N055DHE	NEC	6000	面議	19	TO-262	詢價(jià)
深圳市賽芯源科技有限公司	NP88N055DHE	NEC	18+	TO-262	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	NP88N055DHE	VB	21+	TO-262	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	NP88N055DLE	NEC	23+	TO-262-3	33000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市河鋒鑫科技有限公司	NP88N055ELE	NEC	TO-263	22+	6000	十年配單,只做原裝	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	NP88N055ELE	NEC	23+	TO-263	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	NP88N055ELE	NEC	22+	TO-263	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)

更多NP88N055DHE供應(yīng)商更新時(shí)間2024-12-27 15:30:00

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